Smooth quantum hydrodynamic model vs. NEMO simulation of resonant tunneling diodes

被引：0

作者：

Gardner C.L. ^{[1
]}

Klimeck G. ^{[2
,3
]}

Ringhofer C. ^{[1
]}

机构：

[1] Department of Mathematics and Statistics, Arizona State University, Tempe

[2] Jet Propulsion Laboratory, California Institute of Technology, Pasadena

[3] Network for Computational Nanotechnology, School of Electrical and Computer Engineering, Purdue University, West Lafayette

来源：

Journal of Computational Electronics | 2004年 / 3卷 / 2期

基金：

美国国家科学基金会;

关键词：

NEMO; Quantum hydrodynamic model; Resonant tunneling diode;

D O I：

10.1007/s10825-004-0314-x

中图分类号：

学科分类号：

摘要：

The smooth quantum hydrodynamic model is an extension of the classical hydrodynamic model for semiconductor devices which can handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. Smooth QHD model simulations of the current-voltage curves of resonant tunneling diodes are presented which exhibit negative differential resistance - the experimental signal for quantum resonance effects - and are compared with the experimentally verified current-voltage curves predicted by the simulator NEMO, which uses a non-equilibrium Green function method. © 2004 Kluwer Academic Publishers. Manufactured in The Netherlands.

引用

页码：95 / 102

页数：7

共 16 条

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