Molecular Beam Epitaxial Growth and Properties of Bi2Se3 Topological Insulator Layers on Different Substrate Surfaces

被引：0
作者：
Zhiyi Chen
Thor Axtmann Garcia
Joel De Jesus
Lukas Zhao
Haiming Deng
Jeff Secor
Milan Begliarbekov
Lia Krusin-Elbaum
Maria C. Tamargo
机构：
[1] The City College of New York,
来源：
Journal of Electronic Materials | 2014年 / 43卷
关键词：
TI; MBE; Bi; Se;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Growth of high-quality Bi2Se3 films is crucial not only for study of topological insulators but also for manufacture of technologically important materials. We report a study of the heteroepitaxy of single-crystal Bi2Se3 thin films grown on GaAs and InP substrates by use of molecular beam epitaxy. Surface topography, crystal structure, and electrical transport properties of these Bi2Se3 epitaxial films are indicative of highly c-axis oriented films with atomically sharp interfaces.
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页码：909 / 913
页数：4
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