Enhanced photoluminescence from porous silicon nanowire arrays

被引:0
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作者
Chunqian Zhang
Chuanbo Li
Zhi Liu
Jun Zheng
Chunlai Xue
Yuhua Zuo
Buwen Cheng
Qiming Wang
机构
[1] Institute of Semiconductors,State Key Laboratory on Integrated Optoelectronics
[2] Chinese Academy of Sciences,undefined
关键词
Si nanowire; Porous structure; PL; 78.55.-m; 78.67.Uh; 78.55.Mb;
D O I
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中图分类号
学科分类号
摘要
The enhanced room-temperature photoluminescence of porous Si nanowire arrays and its mechanism are investigated. Over 4 orders of magnitude enhancement of light intensity is observed by tuning their nanostructures and surface modification. It is concluded that the localized states related to Si-O bonds and self-trapped excitations in the nanoporous structures are attributed to the strong light emission.
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