Low-fluence femtosecond-laser interaction with a Mo/Si multilayer stack

被引：0
|
作者：
T. Höche
D. Ruthe
T. Petsch
机构：
[1] 3D-Micromac AG,
[2] Leibniz-Institut für Oberflächenmodifizierung e.V.,undefined
来源：
Applied Physics A | 2004年 / 79卷
关键词：
Silicon; Microstructure; Microscopy; Electron Microscopy; Transmission Electron Microscopy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Nanostructural damage caused by low-fluence, non-ablating femtosecond laser irradiation of Mo/Si multilayer stacks is studied by cross-sectional transmission electron microscopy. A laterally homogeneous modification of the multilayer structure is observed including a complete intermixing of silicon and molybdenum in the depth range between 0 and 20 nm. Below this amorphous layer, molybdenum layers become more and more stable until below 80 nm depth, the pristine microstructure of the non-processed multilayer is observed.
引用
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页码：961 / 963
页数：2
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