Optical gain of interdiffused GaInNAs/GaAs quantum wells

被引:0
|
作者
M.C.Y. Chan
C. Surya
P.K.A. Wai
机构
[1] Photonics Research Center and Department of Electronic and Information Engineering,
[2] The Hong Kong Polytechnic University,undefined
[3] Hung Hom,undefined
[4] Hong Kong,undefined
来源
Applied Physics A | 2002年 / 75卷
关键词
PACS: 42.55.Px; 68.35.Fx; 78.66.Fd;
D O I
暂无
中图分类号
学科分类号
摘要
A self-consistent model for the band structure and optical gain spectra in interdiffused GaxIn1-xN0.04As0.96/GaAs single quantum wells are studied theoretically using Fick’s Law and the Fermi Golden Rule. Due to quantum-well interdiffusion, the peak gain and its peak vary with the annealing time. Our results show that the interdiffusion technique can be used to tune the operation wavelength for multi-wavelength applications without degradation of device performance.
引用
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页码:573 / 576
页数:3
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