Role of DC electric and magnetic fields in the formation of a single-crystal silicon surface layer

被引:0
作者
Brodovoi A.V. [1 ]
Bunchuk S.G. [2 ]
机构
[1] Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine
[2] Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
关键词
electric field; electron paramagnetic resonance; magnetic field; silicon; surface;
D O I
10.1134/S207511331404039X
中图分类号
学科分类号
摘要
The effect of electric and magnetic field exposure of silicon single crystals on their surface structure is investigated. It is demonstrated that long magnetic and electric field exposure of Si samples leads to the formation or healing of surface defects, which manifests itself in the electron spin resonance signal variation. The observed effect can be used in the development of new methods for controlling the parameters of materials with improved physical properties. © 2014 Pleiades Publishing, Ltd.
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页码:413 / 415
页数:2
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