Growth and structure of photosensitive Pb1−xMnxTe(Ga) epitaxial films

被引：0
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作者：
I. R. Nuriev
R. M. Sadygov
A. M. Nazarov
机构：
[1] Azerbaijan National Academy of Sciences,Institute of Physics
来源：
Crystallography Reports | 2008年 / 53卷
关键词：
68.55.-a;
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摘要：
The growth and structure of (1-1.5)-μm-thick Pb1−xMnxTe(Ga)(x = 0.06) films with 0.4−0.9 at % of gallium, grown on BaF2(111) and Pb1−xSnxTe (x = 0.2) (100) substrates by molecular beam epitaxy, have been investigated. It is established that the films are crystallized into an fcc structure, and their growth planes are (111) and (100), according to the substrate orientation. The optimal conditions for obtaining high-resistivity photosensitive p-and n-type films with a perfect crystal structure (W1/2 = 80″−100″) have been determined.
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页码：508 / 510
页数：2
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