High-Voltage AlInGaN LED Chips

被引：0
作者：
L. K. Markov
M. V. Kukushkin
A. S. Pavlyuchenko
I. P. Smirnova
G. V. Itkinson
O. V. Osipov
机构：
[1] Ioffe Institute,
[2] ZAO “IRSET-Center” Innovation Company,undefined
来源：
Semiconductors | 2019年 / 53卷
关键词：
light-emitting diode; LED chip; flip-chip design; high-voltage chip; gallium nitride;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
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页码：1529 / 1534
页数：5
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