Effect of a Strong Electromagnetic Wave on the Conductivity of β-Ga2O3

被引：0
作者：
Abdrakhmanov V.L. [1 ]
Zav’yalov D.V. [1 ]
Konchenkov V.I. [1 ]
Kryuchkov S.V. [1 ,2 ]
机构：
[1] Volgograd State Technical University, Volgograd
[2] Volgograd State Sociopedagogical University, Volgograd
来源：
Bulletin of the Russian Academy of Sciences: Physics | 2020年 / 84卷 / 01期
基金：
俄罗斯基础研究基金会;
关键词：
Gallium compounds;
D O I：
10.3103/S1062873820010037
中图分类号：
学科分类号：
摘要：
Abstract: The conductivity of gallium oxide affected by a strong electromagnetic wave and an external dc electric field with co-directed vectors of intensity is studied, based on an analysis of the quantum kinetic equation that considers the scattering of electrons by charged impurities. It is shown that at temperatures of around 100 K, the main contribution to the conductivity comes from elastic scattering processes, while those with the absorption and emission of photons become important only at amplitudes of wave intensity of around 106 V cm−1. © 2020, Allerton Press, Inc.
引用
收藏
页码：53 / 57
页数：4
相关论文
共 48 条
[21]   Machine learning supported analysis of MOVPE grown β-Ga2O3 thin films on sapphire [J].
Chou, Ta-Shun ;
Bin Anooz, Saud ;
Grueneberg, Raimund ;
Dropka, Natasha ;
Miller, Wolfram ;
Tran, Thi Thuy Vi ;
Rehm, Jana ;
Albrecht, Martin ;
Popp, Andreas .
JOURNAL OF CRYSTAL GROWTH, 2022, 592
[22]   Design and performance of a simple, room-temperature Ga2O3 nanowire gas sensor [J].
Arnold, S. P. ;
Prokes, S. M. ;
Perkins, F. K. ;
Zaghloul, M. E. .
APPLIED PHYSICS LETTERS, 2009, 95 (10)
[23]   Photodarkening and dopant segregation in Cu-doped β-Ga2O3 Czochralski single crystals [J].
Jesenovec, Jani ;
Remple, Cassandra ;
Huso, Jesse ;
Dutton, Benjamin ;
Toews, Parker ;
McCluskey, Matthew D. ;
McCloy, John S. .
JOURNAL OF CRYSTAL GROWTH, 2022, 578
[24]   Comparison of O2 and H2O as oxygen source for homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy [J].
Konishi, Keita ;
Goto, Ken ;
Togashi, Rie ;
Murakami, Hisashi ;
Higashiwaki, Masataka ;
Kuramata, Akito ;
Yamakoshi, Shigenobu ;
Monemar, Bo ;
Kumagai, Yoshinao .
JOURNAL OF CRYSTAL GROWTH, 2018, 492 :39-44
[25]   GaN nanowire and Ga2O3 nanowire and nanoribbon growth from ion implanted iron catalyst [J].
Johnson, Jason L. ;
Choi, Yongho ;
Ural, Ant .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (06) :1841-1847
[26]   Energy transfer between Cr3+ and Ni2+ in transparent glass ceramics containing β-Ga2O3 nanocrystals [J].
Luo, Jin ;
Wu, Botao ;
Zhu, Bin ;
Zhou, Shifeng ;
Yang, Hucheng ;
Ye, Song ;
Lakshminarayana, Gandham ;
Qiu, Jianrong .
JOURNAL OF APPLIED PHYSICS, 2009, 106 (05)
[27]   Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices [J].
Chu, L. K. ;
Lin, T. D. ;
Huang, M. L. ;
Chu, R. L. ;
Chang, C. C. ;
Kwo, J. ;
Hong, M. .
APPLIED PHYSICS LETTERS, 2009, 94 (20)
[28]   Synthesis and characterization of β-Ga2O3 nanowires on amorphous substrates using radio-frequency powder sputtering [J].
Lee, S. Y. ;
Kang, H. C. .
JOURNAL OF CRYSTAL GROWTH, 2015, 412 :25-30
[29]   Synthesis and characterization of Zn-doped GaN crystals by simultaneous carbothermal reduction and nitridation of Ga2O3 and ZnO [J].
Shimada, Shiro ;
Otani, Hiroki ;
Miura, Akira ;
Sekiguchi, Takashi ;
Yokoyama, Masaaki .
JOURNAL OF CRYSTAL GROWTH, 2010, 312 (03) :452-456
[30]   Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition [J].
Roberts, J. W. ;
Chalker, P. R. ;
Ding, B. ;
Oliver, R. A. ;
Gibbon, J. T. ;
Jones, L. A. H. ;
Dhanak, V. R. ;
Phillips, L. J. ;
Major, J. D. ;
Massabuau, F. C-P .
JOURNAL OF CRYSTAL GROWTH, 2019, 528
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