Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction

被引：0
|
作者：
N. V. Vostokov
V. M. Daniltsev
S. A. Kraev
V. L. Krukov
E. V. Skorokhodov
S. S. Strelchenko
V. I. Shashkin
机构：
[1] Institute for Physics of Microstructures,
[2] Russian Academy of Sciences,undefined
[3] OOO “MeGa Epitech”,undefined
来源：
Semiconductors | 2019年 / 53卷
关键词：
power vertical field-effect transistor; GaAs;
D O I：
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学科分类号：
摘要：
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页码：1279 / 1281
页数：2
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