Light-activated Multilevel Resistive Switching Storage in Pt/Cs2AgBiBr6/ITO/Glass Devices

被引：0
作者：
Tingting Zhong
Yongfu Qin
Fengzhen Lv
Haijun Qin
Xuedong Tian
机构：
[1] Guangxi Normal University,School of Physical Science and Technology and Guangxi Key Laboratory of Nuclear Physics and Technology
来源：
Nanoscale Research Letters | / 16卷
关键词：
Light regulation; Cs; AgBiBr; Multilevel resistive switching; Bromine vacancy; Space charge-limited current mechanism; Schottky-like barrier;
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