Unusual memory effects in an incommensurate phase of the TlInS2 ferroelectric semiconductor

被引：0

作者：

M. -H. Yu. Seyidov

R. A. Suleymanov

F. Salehli

S. S. Babayev

T. G. Mammadov

A. I. Nadjafov

G. M. Sharifov

机构：

[1] Gebze Institute of Technology,Department of Physics

[2] Istanbul Technical University,Institute of Physics

[3] National Academy of Sciences of Azerbaijan,undefined

来源：

Physics of the Solid State | 2009年 / 51卷

关键词：

61.72.S-; 61.44.Fw; 64.70.Rh; 66.30.Lw; 77.80.Bh;

D O I：

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中图分类号：

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摘要：

The experimental data on memory effects in an incommensurate phase are analyzed both in undoped layered TlInS2 crystals selected from different technological batches and in TlInS2: La. Various types of unusual memory effect are detected. It is shown that the observed memory effects are due to pinning of the soliton superstructure by a defect density wave in the internal field of the electret state.

引用

页码：568 / 576

页数：8