Development of ion-beam technique for manufacturing silicon nanowires

被引：2
|
作者：
Gurovich B.A. [1 ]
Prikhod'ko K.E. [1 ]
Taldenkov A.N. [1 ]
Yakubovskii A.Y. [1 ]
Maslakov K.I. [1 ]
Komarov D.A. [1 ]
Kutuzov L.V. [1 ]
Fedorov G.E. [1 ]
机构：
[1] National Research Center Kurchatov Institute, Moscow 123182
来源：
Taldenkov, A. N. (taldenkov@imp.kiae.ru) | 1600年 / Maik Nauka-Interperiodica Publishing卷 / 07期
基金：
俄罗斯基础研究基金会;
关键词：
Nanowires;
D O I：
10.1134/S1995078012010090
中图分类号：
学科分类号：
摘要：
A new technique for manufacturing silicon nanowires on the surface of a conventional silicon wafer using ion-beam irradiation through a lithographic mask has been proposed. The conditions needed for synthesizing silicon oxide using the irradiation of the silicon substrate by protons with an energy of about 1 keV have been studied. The possibility of synthesizing silicon oxide in the region of the geometric shadow under the monocrystalline silicon nanowire has been demonstrated. © 2012 Pleiades Publishing, Ltd.
引用
收藏
页码：93 / 97
页数：4
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