Modulation instability in RF MEMS devices

被引：0
作者：
Romolo Marcelli
Giancarlo Bartolucci
Giorgio De Angelis
Andrea Lucibello
Emanuela Proietti
机构：
[1] CNR-IMM Roma,Department of Electronic Engineering
[2] University of Roma “Tor Vergata”,undefined
来源：
Analog Integrated Circuits and Signal Processing | 2012年 / 71卷
关键词：
RF MEMS; Power handling; Modulation instability; Nonlinear Schrodinger equation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Modulation instability generated by mechanical frequencies in RF MEMS switches is predicted and its potential contribution to the RF signal degradation is discussed. In particular, evaluations have been performed for double clamped configurations in shunt capacitive devices. As a conclusion, it is evidenced the possibility for the excitation of satellites affecting as noise sources higher than −40 dB the spectral purity of microwave sources.
引用
收藏
页码：59 / 67
页数：8
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