Research and development of deep anisotropic plasma silicon etching process to form MEMS structures

被引：0
|
作者：
Golishnikov A.A. [1 ]
Kostyukov D.A. [2 ]
Putrya M.G. [2 ]
机构：
[1] Scientific Manufacturing Complex, Technological Centre
来源：
Russian Microelectronics | 2012年 / 41卷 / 7期
关键词：
Etch Rate; RUSSIAN Microelectronics; Silicon Etching; Plasma Etching Process; Trench Structure;
D O I：
10.1134/S1063739712070062
中图分类号：
学科分类号：
摘要：
Process characteristics of deep silicon etching as a function of its operational parameters are investigated. A process of deep anisotropic plasma etching process is developed and optimized to form MEMS silicon structures. The results of the work are used in forming MEMS working structures. © Pleiades Publishing, Ltd., 2012.
引用
收藏
页码：365 / 369
页数：4
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