X-ray powder diffraction shows that a monoclinic WO2.90 film is formed during the thermal oxidation of 200-nm-thick magnetron-sputtered metallic tungsten on quartz substrates at T = 793 K. Temperature elevation to T = 840 K yields orthorhombic WO3 with preferred (001) orientation. Adsorption spectroscopy shows that these films have high transparency (∼90%) in the wavelength range 450–900 nm, and interference is observed in the transparency range. Two types of transitions are discovered: indirect transitions with the energies Egi = 2.77 and 2.41 eV and direct transitions with the energies Egd = 5.49 and 4.82 eV for the oxide films formed at 793 and 840 K, respectively. The tendency toward the increase in the transition energy with increasing annealing temperature proves that the crystallinity and order of the film improve.
机构:
Indian Inst Technol Madras, Dept Phys, Semicond Lab, Chennai 600036, Tamil Nadu, IndiaIndian Inst Technol Madras, Dept Phys, Semicond Lab, Chennai 600036, Tamil Nadu, India
Kumar, K. Uday
Subrahmanyam, A.
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Indian Inst Technol Madras, Dept Phys, Semicond Lab, Chennai 600036, Tamil Nadu, IndiaIndian Inst Technol Madras, Dept Phys, Semicond Lab, Chennai 600036, Tamil Nadu, India
机构:
Islamic Univ Madinah, Fac Sci, Dept Phys, Almadinah Al Munawarah, Saudi ArabiaIslamic Univ Madinah, Fac Sci, Dept Phys, Almadinah Al Munawarah, Saudi Arabia
Hassaballa, S.
Aljabri, A.
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Islamic Univ Madinah, Fac Engn, Dept Mech Engn, Almadinah Al Munawarah, Saudi ArabiaIslamic Univ Madinah, Fac Sci, Dept Phys, Almadinah Al Munawarah, Saudi Arabia
Aljabri, A.
Mohamed, S. H.
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Sohag Univ, Fac Sci, Phys Dept, Sohag 82524, EgyptIslamic Univ Madinah, Fac Sci, Dept Phys, Almadinah Al Munawarah, Saudi Arabia
Mohamed, S. H.
El-Hossary, F. M.
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Sohag Univ, Fac Sci, Phys Dept, Sohag 82524, EgyptIslamic Univ Madinah, Fac Sci, Dept Phys, Almadinah Al Munawarah, Saudi Arabia
机构:
Uppsala Univ, Angstrom Lab, Dept Engn Sci, Div Solid State Phys, SE-75121 Uppsala, SwedenUppsala Univ, Angstrom Lab, Dept Engn Sci, Div Solid State Phys, SE-75121 Uppsala, Sweden
Johansson, Malin B.
Zietz, Burkhard
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Uppsala Univ, Angstrom Lab, Dept Chem, Div Phys Chem, SE-75120 Uppsala, SwedenUppsala Univ, Angstrom Lab, Dept Engn Sci, Div Solid State Phys, SE-75121 Uppsala, Sweden
Zietz, Burkhard
Niklasson, Gunnar A.
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Uppsala Univ, Angstrom Lab, Dept Engn Sci, Div Solid State Phys, SE-75121 Uppsala, SwedenUppsala Univ, Angstrom Lab, Dept Engn Sci, Div Solid State Phys, SE-75121 Uppsala, Sweden
Niklasson, Gunnar A.
Osterlund, Lars
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Uppsala Univ, Angstrom Lab, Dept Engn Sci, Div Solid State Phys, SE-75121 Uppsala, SwedenUppsala Univ, Angstrom Lab, Dept Engn Sci, Div Solid State Phys, SE-75121 Uppsala, Sweden
机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhang, J.
Wang, X. L.
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Wang, X. L.
Xia, X. H.
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机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Xia, X. H.
Gu, C. D.
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机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Gu, C. D.
Zhao, Z. J.
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机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhao, Z. J.
Tu, J. P.
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机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhang, J.
Wang, X. L.
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机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Wang, X. L.
Xia, X. H.
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机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Xia, X. H.
Gu, C. D.
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机构:Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Gu, C. D.
Tu, J. P.
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China