Microstructural evolution of tantalum nitride thin films synthesized by inductively coupled plasma sputtering

被引：8

作者：

Baik S.-I. ^{[1
,2
]}

Kim Y.-W. ^{[1
]}

机构：

[1] Research Institute of Advanced Materials, Department of Materials Science and Engineering, Seoul National University, 1 Gwanak-ro Gwanak-gu, Seoul

[2] Present address: Department of Materials Science & Engineering, Northwestern University, Evanston, 60208, IL

来源：

Applied Microscopy | 2020年 / 50卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

Inductively coupled plasma (ICP); Microstructure; Tantalum nitride (TaN); Thin film; Transition metals; Transmission electron microscopy (TEM);

D O I：

10.1186/s42649-020-00026-7

中图分类号：

学科分类号：

摘要：

Tantalum nitride (TaNx) thin films were grown utilizing an inductively coupled plasma (ICP) assisted direct current (DC) sputtering, and 20–100% improved microhardness values were obtained. The detailed microstructural changes of the TaNx films were characterized utilizing transmission electron microscopy (TEM), as a function of nitrogen gas fraction and ICP power. As nitrogen gas fraction increases from 0.05 to 0.15, the TaNx phase evolves from body-centered-cubic (b.c.c.) TaN0.1, to face-centered-cubic (f.c.c.) δ-TaN, to hexagonal-close-packing (h.c.p.) ε-TaN phase. By increasing ICP power from 100 W to 400 W, the f.c.c. δ- TaN phase becomes the main phase in all nitrogen fractions investigated. The higher ICP power enhances the mobility of Ta and N ions, which stabilizes the δ-TaN phase like a high-temperature regime and removes the micro-voids between the columnar grains in the TaNx film. The dense δ-TaN structure with reduced columnar grains and micro-voids increases the strength of the TaNx film. © 2020, The Author(s).

引用

共 29 条

[1]

Baba K., Hatada R., Synthesis and properties of tantalum nitride films formed by ion beam assisted deposition, Surf. Coat. Technol., 84, (1996)

[2]

Baik S.I., Duhin A., Phillips P.J., Klie R.F., Gileadi E., Seidman D.N., Eliaz N., Atomic-scale structural and chemical study of columnar and multilayer re-Ni electrodeposited thermal barrier coating, Adv. Eng. Mater., 18, 7, pp. 1133-1144, (2016)

[3]

Baik S.I., Park J.W., Ahn T.Y., Lee G.R., Lee J.J., Kim Y.W., Characterization of TaN thin films synthesized by ICP assisted sputtering, Microsc. Microanal., 14, pp. 330-331, (2008)

[4]

Cho S.L., Kim K.B., Min S.H., Shin H.K., Kim S.D., Diffusion barrier properties of Metallorganic chemical vapor deposited tantalum nitride films against cu metallization, J. Electrochem. Soc., 146, (1999)

[5]

Choi K.J., Yoon S.G., Characteristics of Pt and TaN metal gate electrode for high-k hafnium oxide gate dielectrics, Electrochem. Solid-State Lett., 7, (2004)

[6]

Ensinger W., Kiuchi M., Satou M., Low-temperature formation of metastable cubic tantalum nitride by metal condensation under ion irradiation, J. Appl. Phys., 77, 12, pp. 6630-6635, (1995)

[7]

Frisk K., Analysis of the phase diagram and thermochemistry in the ta–N and the ta–C–N systems, J. Alloys Comp., 278, (1998)

[8]

Han C.H., Cho K.N., Oh J.E., Paek S.H., Park C.S., Lee S.I., Lee M.Y., Lee J.G., Barrier metal properties of amorphous tantalum nitride thin films between platinum and silicon deposited using remote plasma metal organic chemical vapor method, Jpn. J. Appl. Phys., 37, pp. 2646-2651, (1998)

[9]

Hopwood J., Qian F., Mechanisms for highly ionized magnetron sputtering, J. Appl. Phys., 78, (1995)

[10]

Kawasaki H., Doi K., Namba J., Suda Y., Ohshima T., Ebihara K., Characterization of tantalum nitride thin films fabricated by pulsed Nd, Jpn. J. Appl. Phys., 40, (2001)

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