Structural and optical properties of low-temperature hydride-MOCVD AlGaAs/GaAs(100) heterostructures based on omission solid solutions

被引：0

作者：

P. V. Seredin

A. V. Glotov

E. P. Domashevskaya

I. N. Arsentyev

D. A. Vinokurov

A. L. Stankevich

I. S. Tarasov

机构：

[1] Voronezh State University,Ioffe Physicotechnical Institute

[2] Russian Academy of Sciences,undefined

来源：

Semiconductors | 2009年 / 43卷

关键词：

GaAs; Epitaxial Film; Diffraction Profile; Metal Sublattice; Sample EM1017;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

X-ray diffraction, scanning electron microscopy, and IR reflectance spectroscopy were used to study properties of epitaxial low-temperature hydride-MOCVD AlGaAs/GaAs (100) heterostructures. It was found that the variation in the AlGaAs alloy lattice’s parameter with Al content does not obey the classical Vegard’s law, and the lattice parameters are smaller than those of GaAs.

引用

页码：1610 / 1616

页数：6

共 54 条

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