Metal silicide/poly-Si Schottky diodes for uncooled microbolometers

被引:0
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作者
Kirill V Chizh
Valery A Chapnin
Victor P Kalinushkin
Vladimir Y Resnik
Mikhail S Storozhevykh
Vladimir A Yuryev
机构
[1] A M Prokhorov General Physics Institute of the Russian Academy of Sciences,A M Prokhorov General Physics Institute of the Russian Academy of Sciences
[2] Technopark of GPI RAS,undefined
来源
Nanoscale Research Letters | / 8卷
关键词
Ni silicide; Poly-Si; Schottky diodes; Temperature sensors;
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摘要
Nickel silicide Schottky diodes formed on polycrystalline Si 〈P〉 films are proposed as temperature sensors of monolithic uncooled microbolometer infrared focal plane arrays. The structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as a multi-phase compound composed of 20% to 40% of Ni3Si, 30% to 60% of Ni2Si, and 10% to 30% of NiSi with probable minor content of NiSi2 at the silicide/poly-Si interface. Rectification ratios of the Schottky diodes vary from about 100 to about 20 for the temperature increasing from 22℃ to 70℃; they exceed 1,000 at 80 K. A barrier of around 0.95 eV is found to control the photovoltage spectra at room temperature. A set of barriers is observed in photo-electromotive force spectra at 80 K and attributed to the Ni silicide/poly-Si interface. Absolute values of temperature coefficients of voltage and current are found to vary from 0.3%℃ to 0.6%/℃ for forward bias and around 2.5%/℃ for reverse bias of the diodes.
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