Using Phosphorus-Doped α-Si Gettering Layers to Improve NILC Poly-Si TFT Performance

被引：0

作者：

Bau-Ming Wang

YewChung Sermon Wu

机构：

[1] National Chiao Tung University,Department of Materials Science and Engineering

来源：

Journal of Electronic Materials | 2010年 / 39卷

关键词：

Ni-metal-induced lateral crystallization (NILC); polycrystalline silicon (poly-Si) thin-film transistors (TFTs); Ni-gettering layers;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Ni-metal-induced lateral crystallization (NILC) has been utilized to fabricate polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi2 precipitates, thus degrading device performance. In this study, phosphorus-doped amorphous silicon (p-α-Si) and chemical oxide (chem-SiO2) films were used as Ni-gettering layers. After a gettering process, the Ni impurity within the NILC poly-Si film and the leakage current were both reduced, while the on/off current ratio was increased. This gettering process is compatible with NILC TFT processes and suitable for large-area NILC poly-Si films.

引用

页码：157 / 161

页数：4