Electronic state of nanodiamond/graphite interfaces

被引：0

作者：

A.V. Okotrub

L.G. Bulusheva

V.L. Kuznetsov

A.V. Gusel’nikov

A.L. Chuvilin

机构：

[1] Nikolaev Institute of Inorganic Chemistry SB RAS,

[2] Boreskov Institute of Catalysis SB RAS,undefined

来源：

Applied Physics A | 2005年 / 81卷

关键词：

Spectroscopy; Thin Film; Operating Procedure; Electronic Material; Electronic State;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The electronic state of nanodiamond/graphite interfaces in samples prepared by annealing of nanodiamonds (ND) at 1150–1600 K has been probed using X-ray fluorescence spectroscopy and field-emission measurements. Comparison between [C]Kα spectra of ND before and after annealing revealed an enhancement of density of high-energy occupied states in the products. A quantum-chemical calculation using a carbon model showed that the observed states could originate from the electrons of dangling bonds produced by peeling of a graphitic shell from the (111) surface of a diamond particle. The developed graphitic layers screen the weakly bonding electrons, which results in a lowering of the efficiency of field-electron emission from the samples with an increase of annealing temperature.

引用

页码：393 / 398

页数：5