On the Role of Structural Imperfections of Graphene in Resonant Tunneling through Localized States in the h-BN Barrier of van-der-Waals Heterostructures

被引：0
|
作者：
M. V. Grigoriev
D. A. Ghazaryan
E. E. Vdovin
Yu. N. Khanin
S. V. Morozov
K. S. Novoselov
机构：
[1] Institute of Problems of Microelectronics Technology and High Purity Materials,
[2] Russian Academy of Sciences,undefined
[3] School of Physics and Astronomy,undefined
[4] University of Manchester,undefined
[5] Department of Physics,undefined
[6] National Research University Higher School of Economics,undefined
[7] Department of Material Science and Engineering,undefined
[8] National University of Singapore,undefined
来源：
Semiconductors | 2020年 / 54卷
关键词：
graphene; van-der-Waals heterostructures; crystal-lattice defects; boron nitride; tunneling transistor; resonant tunneling;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：291 / 296
页数：5
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