On the Role of Structural Imperfections of Graphene in Resonant Tunneling through Localized States in the h-BN Barrier of van-der-Waals Heterostructures

被引：0

作者：

M. V. Grigoriev

D. A. Ghazaryan

E. E. Vdovin

Yu. N. Khanin

S. V. Morozov

K. S. Novoselov

机构：

[1] Institute of Problems of Microelectronics Technology and High Purity Materials,

[2] Russian Academy of Sciences,undefined

[3] School of Physics and Astronomy,undefined

[4] University of Manchester,undefined

[5] Department of Physics,undefined

[6] National Research University Higher School of Economics,undefined

[7] Department of Material Science and Engineering,undefined

[8] National University of Singapore,undefined

来源：

Semiconductors | 2020年 / 54卷

关键词：

graphene; van-der-Waals heterostructures; crystal-lattice defects; boron nitride; tunneling transistor; resonant tunneling;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：291 / 296

页数：5

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