Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets

被引:0
作者
Kuei-Yi Chu
Meng-Hsueh Chiang
Shiou-Ying Cheng
Wen-Chau Liu
机构
[1] National Cheng-Kung University,Institute of Microelectronics, Department of Electrical Engineering
[2] National II an University,Department of Electronic Engineering
来源
Semiconductors | 2012年 / 46卷
关键词
GaAs; High Electron Density; High Electron Mobility Transistor; Pseudomorphic High Electron Mobility Transistor; Linear Transconductance;
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学科分类号
摘要
Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple δ-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple δ-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple δ-doped counterpart. The DCPHEMT with graded triple δ-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.
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页码:203 / 207
页数:4
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