Peculiarities of the current-voltage characteristics of oxidized porous silicon

被引：0

作者：

M. S. Ablova

M. V. Zamoryanskaya

V. I. Sokolov

R. I. Khasanov

机构：

[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute

来源：

Technical Physics Letters | 2003年 / 29卷

关键词：

Silicon; Porous Silicon; Quantum Size; Nanocomposite Material; Quantum Size Effect;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Oxidized porous silicon is a nanocomposite material. The current-voltage characteristics of MOS structures based on this material exhibit some special features (large plateau, oscillations), which can be considered as manifestations of quantum size effects.

引用

页码：459 / 460

页数：1