A high-performance Cu-doped vanadium pentoxide thin-film cathode for lithium-ion batteries

被引:0
|
作者
Yuyao Li
Fan Zhang
Wei Gao
Zhaolin Zhan
机构
[1] Kunming University of Science and Technology,Faculty of Material Science and Engineering
[2] University of Auckland,Engineering School
来源
Ionics | 2021年 / 27卷
关键词
Cu-doped V; O; Cathode material; Nanoscale net structure; Crystal lattice distortion; High-specific discharge capacity;
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学科分类号
摘要
Cu-doped V2O5 thin film cathodes are successfully fabricated by an electrodeposition method. The cathode with 1 wt.% Cu-doped shows excellent performance with a specific discharge capacity of up to 362 mAh/g, representing ~86.2% of the theoretical specific capacity (420 mAh/g), and relatively low polarization in charge/discharge processes. The highest discharge capacity is increased by 27% (73 mAh/g) compared to a pure V2O5 cathode. A moderate level of Cu doping can promote the formation of a three-dimensional nanoscale net structure, which can effectively increase the specific surface area of the V2O5 cathode and improve the transport capacity of Li ions. The Cu ions strengthen the V-O bonding of the [VO5] unit and the association of the [VO5] plate. More small polaritons are generated by coupling the negative charge on the V4+ cation and the lattice deformation caused by the Cu2+ cation, resulting in a higher electronic conductivity.
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页码:2335 / 2344
页数:9
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