Preparation of TiSi2 via flash lamp processing of TiN/Ti/Si heterostructures

被引:0
作者
V. M. Ievlev
S. V. Kannykin
V. V. Kolos
S. B. Kushchev
M. I. Markevich
A. M. Chaplanov
V. F. Stel’makh
机构
[1] Voronezh State University,Institute of Physics and Technology
[2] Voronezh State Technical University,undefined
[3] NPO Integral Research and Production Association,undefined
[4] Belarussian Academy of Sciences,undefined
[5] Belarussian State University,undefined
来源
Inorganic Materials | 2009年 / 45卷
关键词
Native Oxide Layer; Titanium Silicide; Incoherent Light; Select Area Electron Diffrac; Light Pulse Duration;
D O I
暂无
中图分类号
学科分类号
摘要
The structural and phase transformations induced in the TiN/Ti/Si system by flash processing with incoherent light have been studied by transmission electron microscopy and Auger electron spectroscopy. The conditions have been identified under which polycrystalline C49 or C54 TiSi2 films grow.
引用
收藏
页码:773 / 776
页数:3
相关论文
共 12 条
[1]  
Zsoldosa E.(1986)X-Ray Investigation of Ti-Si Thin Films Prepared by Solid Phase Reaction Thin Solid Films 137 243-249
[2]  
Petõa G.(1996)TiSi Thin Solid Films 290–291 469-472
[3]  
Schillera V.(1985) Phase Transformation Characteristics on Narrow Devices Phys. B + C (Amsterdam, Neth.) 129 205-209
[4]  
Vály G.(1989)Formation of Palladium and Titanium Silicides by Rapid Thermal Annealing J. Vac. Sci. Technol. 7 604-608
[5]  
Glen L.(undefined)The Growth of Titanium Silicides in Thin Film Ti/Si Structures undefined undefined undefined-undefined
[6]  
Miles S.(undefined)undefined undefined undefined undefined-undefined
[7]  
Randy W.(undefined)undefined undefined undefined undefined-undefined
[8]  
Levy D.(undefined)undefined undefined undefined undefined-undefined
[9]  
Ponpon J.P.(undefined)undefined undefined undefined undefined-undefined
[10]  
Grob A.(undefined)undefined undefined undefined undefined-undefined