Modeling and simulation of the enhanced low-dose-rate sensitivity of thick isolating layers in advanced ICs

被引：13
作者：
Zebrev G.I. [1 ]
机构：
[1] Moscow Engineering Physics Institute (State University), Moscow
来源：
Russian Microelectronics | 2006年 / 35卷 / 03期
关键词：
Recombination; Dose Rate; Quantitative Description;
D O I：
10.1134/S1063739706030061
中图分类号：
学科分类号：
摘要：
A model is developed that yields a qualitative and a quantitative description of the enhanced low-dose-rate sensitivity of BJTs. This effect is shown to be attributable to tail-state recombination increasing with dose rate for thick isolating layers experiencing a relatively low electric field. © Pleiades Publishing, Inc., 2006.
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收藏
页码：177 / 184
页数：7
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