A Novel Unit Cell for Active Switches in the Millimeter-Wave Frequency Range

被引：0

作者：

Daniel Müller

Gunnar Scherer

Ulrich J. Lewark

Hermann Massler

Sandrine Wagner

Axel Tessmann

Arnulf Leuther

Thomas Zwick

Ingmar Kallfass

机构：

[1] Karlsruhe Institute of Technology (KIT),Institute of Radio Frequency Engineering and Electronics (IHE)

[2] Fraunhofer Institute of Applied Solid State Physics (IAF),Institute of Robust Power Semiconductor Systems (ILH)

[3] University of Stuttgart,undefined

来源：

Journal of Infrared, Millimeter, and Terahertz Waves | 2018年 / 39卷

关键词：

Active switch; Single pole double throw (SPDT); Multiple throw; Monolithic microwave integrated circuit (MMIC); InGaAs mHEMT;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This paper presents a novel transistor unit cell which is intended to realize compact active switches in the high millimeter-wave frequency range. The unit cell consists of the combination of shunt and common gate transistor within a four-finger transistor cell, achieving gain in the amplifying state as well as good isolation in the isolating state. Gate width-dependent characteristics of the unit cell as well as the design of actual switch implementations are discussed in detail. To verify the concept, two switches, a single pole double throw (SPDT) switch and single pole quadruple throw (SP4T) switch, intended for the WR3 frequency range (220–325 GHz) were manufactured and characterized. The measured gain at 250 GHz is 4.6 and 2.2 dB for the SPDT and SP4T switch, respectively. An isolation of more than 24 dB for the SPDT switch and 12.8 dB for the SP4T switch was achieved.

引用

页码：161 / 176

页数：15