Performance Enhancement of ZnMgO:Al/ZnMgO/CIGSSe Solar Cell With the Combination of CZTGSe HT-ERL Layer

The performance of conventional magnesium-doped zinc oxide (ZnMgO) and copper-indium-gallium-sulphur-selenide (CIGSSe)-based heterojunction thin-film solar cells has been enhanced. The simulation of a conventional (Ni/Al)/ZnMgO:Al/ZnMgO/CIGSSe/Mo solar cell is done at the beginning of the paper to validate the simulation results with the experimental results. Electrical and optical parameter values obtained from the simulation are comparable to the results obtained from the experiment. Also, the efficiency of the conventional structure is increased to 26.53% by optimizing the thickness and doping concentration. A different structure is proposed that combines the copper-zinc-tin-gallium-diselenide (CZTGSe) p-type semiconductor at the back surface field (BSF) contact as a hole transport-electron reflected layer (HT-ERL). The efficiency of the proposed structure is enhanced by 7.63% compared to the recent contemporary literature and 1.10% compared to the optimized results. Moreover, the proposed structure comprises (Ni/Al)/ZnMgO:Al/ZnMgO/CIGSSe/CZTGSe/Mo, which provides the highest conversion efficiency of (η = 27.63%), an open-circuit voltage of (Voc= 807.3 mV), a short-circuit current density of (Jsc= 27.59 mA/cm2), and a fill factor of (FF = 82.26%), under the AM1.5G air mass.