Low temperature plasma assisted atomic layer deposition in nitrogen carrier gas studied by optical emission spectroscopy

被引:0
|
作者
Sanna T. Lehti
机构
[1] ASTRaL,
[2] Lappeenranta University of Technology,undefined
来源
The European Physical Journal D | 2013年 / 67卷
关键词
Plasma Physics;
D O I
暂无
中图分类号
学科分类号
摘要
A low temperature plasma assisted atomic layer deposition process from tetrakis (dimethylamino)-titanium (TDMAT) and oxygen plasma was investigated using optical emission spectroscopy in a commercial TFS-500 atomic layer deposition reactor in industrial-like conditions with different plasma powers to optimize the plasma-assisted deposition process and to develop a tool for process control. The major emitting species recognized were the nitrogen first followed by the second positive system, carbon monoxide, nitrogen monoxide (γ)-system, atomic carbon and atomic nitrogen. The process measurements were compared to background measurements to see the process induced differences. CHx appearance in the plasma lowered the intensities of CO, NO and N2 1st+ system peaks. Also, the nitrogen atom content varied in the process measurements. By monitoring the affected species and vibrational temperature, the effect of TDMAT oxidation on the surface could be seen through the resulting changes in the plasma emission.
引用
收藏
相关论文
共 50 条
  • [41] Analysis of Low-Temperature Plasma by Optical Emission Spectroscopy with Spatial Scanning
    R. R. Ismagilov
    A. B. Loginov
    S. A. Malykhin
    V. I. Kleshch
    A. N. Obraztsov
    Instruments and Experimental Techniques, 2021, 64 : 700 - 704
  • [42] Analysis of Low-Temperature Plasma by Optical Emission Spectroscopy with Spatial Scanning
    Ismagilov, R. R.
    Loginov, A. B.
    Malykhin, S. A.
    Kleshch, V., I
    Obraztsov, A. N.
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 2021, 64 (05) : 700 - 704
  • [43] Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source
    Jung, Yong Chan
    Hwang, Su Min
    Le, Dan N.
    Kondusamy, Aswin L. N.
    Mohan, Jaidah
    Kim, Sang Woo
    Kim, Jin Hyun
    Lucero, Antonio T.
    Ravichandran, Arul
    Kim, Harrison Sejoon
    Kim, Si Joon
    Choi, Rino
    Ahn, Jinho
    Alvarez, Daniel
    Spiegelman, Jeff
    Kim, Jiyoung
    MATERIALS, 2020, 13 (15) : 1 - 10
  • [44] Low-Temperature Cathodoluminescence of Nitrogen-Doped ZnO Films Deposited at Low-Temperature by Atomic Layer Deposition
    Sarwar, M.
    Witkowski, B. S.
    Sulich, A.
    Guziewicz, E.
    ACTA PHYSICA POLONICA A, 2022, 141 (02) : 135 - 139
  • [45] Room Temperature Copper Seed Layer Deposition by Plasma-Enhanced Atomic Layer Deposition
    Mao, J.
    Eisenbraun, E.
    Omarjee, V.
    Korolev, A.
    Dussarrat, C.
    SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS, 2011, 35 (02): : 125 - 132
  • [46] Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
    Kaariainen, Tommi O.
    Cameron, David C.
    PLASMA PROCESSES AND POLYMERS, 2009, 6 : S237 - S241
  • [47] Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
    Uvarov, A., V
    Gudovskikh, A. S.
    Nevedomskiy, V. N.
    Baranov, A., I
    Kudryashov, D. A.
    Morozov, I. A.
    Kleider, J-P
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 53 (34)
  • [48] Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
    Tang Wen-Hui
    Liu Bang-Wu
    Zhang Bo-Cheng
    Li Min
    Xia Yang
    ACTA PHYSICA SINICA, 2017, 66 (09)
  • [49] Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
    Potts, S. E.
    Keuning, W.
    Langereis, E.
    Dingemans, G.
    van de Sanden, M. C. M.
    Kessels, W. M. M.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (07) : P66 - P74
  • [50] Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
    Potts, S. E.
    van den Elzen, L. R. J. G.
    Dingemans, G.
    Langereis, E.
    Keuning, W.
    van de Sanden, M. C. M.
    Kessels, W. M. M.
    ATOMIC LAYER DEPOSITION APPLICATIONS 5, 2009, 25 (04): : 233 - 242