Effect of pressure on the intermediate-valence semiconductor SmB6: 11B-NMR

被引：0
作者：
Kohei Nishiyama
Takeshi Mito
Ko-ichi Ueda
Takehide Koyama
Takao Kohara
Gabriel Pristáš
Slavomír Gabáni
Marián Reiffers
Karol Flachbart
Yasuhiro Komaki
Mitsutane Kokubu
Hideto Fukazawa
Yoh Kohori
Nao Takeshita
Natalia Shitsevalova
机构：
[1] University of Hyogo,Graduate School of Material Science
[2] Slovak Academy of Science,Institute of Experimental Physics
[3] Chiba University,Department of Physics, Graduate School of Science
[4] National Institute of Advanced Industrial Science and Technology,Nanoelectronics Research Institute
[5] National Academy of Science of Ukraine,Institute for Problem of Material Science
来源：
Journal of the Korean Physical Society | 2013年 / 62卷
关键词：
SmB; NMR intermediate valence; Kondo insulator; Pressure;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We report the first high-pressure 11B-NMR studies above 3 GPa on the intermediate-valence semiconductor SmB6. A 11B-NMR line obtained at 4.9 GPa, the highest pressure for the measurements, and at 1.9 K shows quite similar a line shape to that at ambient pressure, indicating no structural or magnetic phase transition up to this pressure. The temperature dependence of the spin lattice relaxation rate 1/T1 at 4.9 GPa still exhibits an activation-type temperature dependence characteristic of semiconductors, which reveals an obvious decrease in the insulating gap by about 30% compared to the gap at ambient pressure. The present experimental facts of a finite insulator gap and no magnetic order at 4.9 GPa are consistent with recent transport measurements performed under better hydrostatic pressures.
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页码：2024 / 2027
页数：3
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