Melt-grown CuInSe2 and photovoltaic cells

The crystal structure, cleavage properties and phase relations of the ternary semiconductor CuInSe2 are first described. Then the growth of monocrystals of this chalcopyrite from the melt, with the elements as starting materials, is reviewed from a historical perspective. The procedures for a preferred Bridgman method of growth are described, which result in centimeter-size crystals within an ingot having uniform composition and conductivity-type. The ingot is also free of adhesion to the synthesizing ampoule and, in addition, is free of voids and microcracks. The electronic properties of CuInSe2 are briefly discussed and photovoltaic cells using p-type monocrystalline absorber substrates are reviewed. Finally, the progress made in thin film polycrystalline CuInSe2 based cells is briefly touched upon.