Effect of deposition and annealing conditions on the optical properties of amorphous silicon

被引：0
作者：
A. I. Mashin
A. V. Ershov
D. A. Khokhlov
机构：
[1] N. I. Lobachevskii Nizhnii Novgorod State University,
来源：
Semiconductors | 1998年 / 32卷
关键词：
Silicon; Evaporation; Refractive Index; Optical Property; Treatment Condition;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The spectral characteristics of the refractive index and the extinction coefficient in the range 0.6–2.0 eV for amorphous silicon films prepared by electron-beam evaporation with variation of the substrate temperature, deposition rate, and annealing temperature in air are presented. The results obtained are discussed on the basis of the changes in the Penn gap energy as a function of the indicated preparation and treatment conditions.
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页码：782 / 784
页数：2
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