Deposition of fine silicon carbide relics by electrostatic atomization of a polymeric precursor

被引：0
作者：
D. A. Grigoriev
M. J. Edirisinghe
X. Bao
机构：
[1] Queen Mary,Department of Materials
[2] University of London,On study leave from the Institute of Problems of Mechanical Engineering
[3] Russian Academy of Sciences,Present address: IPTME
[4] Loughborough University,undefined
[5] Loughborough,undefined
来源：
Journal of Materials Research | 2002年 / 17卷
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摘要：
A solution of a polymeric precursor for silicon carbide (SiC) was subjected to electrostatic atomization in the cone-jet mode to spray droplets on a zirconia substrate. The resulting deposit was heated to 1300 °C to obtain SiC relics. Precursor and ceramic relics were characterized by microscopy. The size distribution of the droplet relics was studied at several flow rates of the solution to the electrostatic atomization chamber. The results show that by controlling the flow rate SiC relics approximately 5 μm in diameter can be produced.
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页码：487 / 491
页数：4
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