Growth of Germanium Quantum Dots on Oxidized Silicon Surface

被引：0

作者：

K. A. Lozovoy

A. P. Kokhanenko

N. Yu. Akimenko

V. V. Dirko

A. V. Voitsekhovskii

机构：

[1] National Research Tomsk State University,

[2] Pacific National University,undefined

来源：

Russian Physics Journal | 2020年 / 63卷

关键词：

quantum dots; silicon; germanium; silicon oxide; nanoheterostructures; molecular beam epitaxy; critical thickness; Volmer–Weber mechanism; surface density; size distribution function;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic model of the nucleation and growth of three-dimensional islands by the Volmer–Weber mechanism in this system is proposed. The dependences of the average size and surface density of quantum dots on the parameters of their synthesis are obtained. The proposed theoretical model can easily be extended to other material systems in which island growth by the Volmer–Weber mechanism is realized.

引用

页码：296 / 302

页数：6

共 27 条

[1]

Douhan RMH(2018)undefined Russ. Phys. J. 61 1194-1201

[2]

Kokhanenko AP(2018)undefined Opto-Electron. Rev. 26 195-200

[3]

Lozovoy KA(2004)undefined Phys. Solid State 46 77-79

[4]

Izhnin II(2008)undefined Superlattices and Microstructures 44 305-314

[5]

Fitsych OI(2015)undefined Phys. Chem. Chem. Phys. 17 30052-30056

[6]

Voitsekhovskii AV(2011)undefined Crystal Growth & Design. 11 5441-5448

[7]

Nikiforov AI(1996)undefined Appl. Surf. Sci. 102 6-11

[8]

Ul’yanov VV(2015)undefined Crystal Growth & Design 15 1055-1059

[9]

Pchelyakov OP(2018)undefined Russ. Phys. J. 60 1871-1879

[10]

Rowell NL(undefined)undefined undefined undefined undefined-undefined

← 1 2 3 →