Preparation of nitrogen-doped YSZ thin films by pulsed laser deposition and their characterization

被引：0
作者：
I. Valov
R. A. De Souza
C. Z. Wang
A. Börger
C. Korte
M. Martin
K. -D. Becker
J. Janek
机构：
[1] Justus-Liebig University,Institute of Physical Chemistry
[2] RWTH Aachen University,Institute of Physical Chemistry
[3] Justus-Liebig University,1st Physical Institute
[4] TU-Braunschweig,Institute of Physical and Theoretical Chemistry
来源：
Journal of Materials Science | 2007年 / 42卷
关键词：
Pulse Laser Deposition; Yttria Stabilize Zirconia; High Binding Energy; High Nitrogen Content; Nitrogen Doping;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The pulsed laser deposition technique was applied to deposit nitrogen-doped yttria stabilized zirconia (YSZ) thin films. The working parameters were varied in order to achieve a maximal nitrogen content. The films were characterized by SIMS, XPS, X-ray diffraction and optical spectroscopy. The surface topography was studied by AFM and HRSEM. The influence of the deposition parameters on the film properties is discussed.
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页码：1931 / 1941
页数：10
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