First-Principles Calculations of the Structural, Electronic, Elastic and Optical Properties of LiGaS2 and LiGaSe2 Semiconductors Under Different Pressures

被引:0
作者
V. Kumar
S. Chandra
R. Santosh
机构
[1] Indian Institute of Technology (Indian School of Mines),Department of Electronics Engineering
来源
Journal of Electronic Materials | 2018年 / 47卷
关键词
LiGaS; and LiGaSe; semiconductors; first-principles calculations; structural properties; electronic properties; elastic properties; optical properties;
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学科分类号
摘要
The structural, electronic, elastic and optical properties of LiGaS2 and LiGaSe2 orthorhombic crystals have been studied using local density approximation and general gradient approximation within first-principles density functional theory calculations. The lattice constants, energy band gap, total density of states and partial density of states have been calculated. The pressure-dependence of elastic stiffness constants (Cij), bulk modulus (B), shear modulus (G), Poisson’s ratio (υ), Young’s modulus (γ) and B/G ratio have been calculated at 0 GPa, 10 GPa, 20 GPa, and 30 GPa pressures. The optical properties such as dielectric constants, absorption spectra, refractive index, extinction coefficient, reflectivity and energy-loss spectra have also been estimated under 0 GPa, 10 GPa, and 20 GPa pressures in the energy range 0–15 eV. The values of 14 elastic and 3 optical parameters have been calculated at different pressures. The estimated values agree well with the known values.
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页码:1223 / 1231
页数:8
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