A study of photomodulated reflectance on staircase-like, n-doped GaAs/AlxGa1−xAs quantum well structures

被引：0

作者：

Omer Donmez

Ferhat Nutku

Ayse Erol

Cetin M Arikan

Yuksel Ergun

机构：

[1] Istanbul University,Department of Physics, Faculty of Science

[2] Anadolu University,Department of Physics, Faculty of Science

来源：

Nanoscale Research Letters | / 7卷

关键词：

Photomodulated reflectance; Quantum well infrared photodetectors (QWIP); Aspnes’ third derivative form; Excitonic levels.; 85.30.De; 85.60.-q; 71.55.Eq.;

D O I：

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学科分类号：

摘要：

In this study, photomodulated reflectance (PR) technique was employed on two different quantum well infrared photodetector (QWIP) structures, which consist of n-doped GaAs quantum wells (QWs) between undoped AlxGa1−xAs barriers with three different x compositions. Therefore, the barrier profile is in the form of a staircase-like barrier. The main difference between the two structures is the doping profile and the doping concentration of the QWs. PR spectra were taken at room temperature using a He-Ne laser as a modulation source and a broadband tungsten halogen lamp as a probe light. The PR spectra were analyzed using Aspnes’ third derivative functional form.

引用

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