Characterization of GaAs/ InxGa1−xAs quantum-dot heterostructures by electrical and optical methods

Results of electrical and optical studies of GaAs/InxGa1−xAs heterostructures are reported. The aim of these studies was to identify the quantum dots and develop a technology of their growth by spontaneous transformation of an InxGa1−xAs layer. The surface charge at the depth of the quantum dots and their surface density as a function of the deposition time of this narrow-band material are estimated by C-V profiling. A photoluminescence study of the quantum dots revealed peculiarities of the filling of their electron states at various excitation levels. The influence of Coulomb interactions on the optical properties of the quantum dots is discussed.