Optical phonons in Ge quantum dots obtained on Si(111)

被引：0
|
作者：
A. B. Talochkin
S. A. Teys
机构：
[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Division
来源：
Journal of Experimental and Theoretical Physics Letters | 2002年 / 75卷
关键词：
78.67.Hc; 63.22+m;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The Raman light scattering from optical phonons of Ge quantum dots grown by molecular beam epitaxy on a Si(111) surface is studied. A series of Raman lines related to the quantization of phonon spectrum is observed. It is shown that phonon frequencies are adequately described in terms of the elastic properties and the dispersion of the optical phonons of bulk Ge. The strain experienced by the Ge quantum dots is estimated.
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页码：264 / 267
页数：3
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