Design and Analysis of a Serpentine Type RF MEMS Shunt Switch with Low Pull-in-Voltage

This paper presents the design and simulation of the RF MEMS capacitive shunt switch, using FEM and HFSS tools. Here, we have done electromechanical and electromagnetic analysis by varying the materials, thickness, of the beam, gap between the membrane and the dielectric. The Meanders are used to vary the spring constant, which supports changes in pull-in voltage, which is obtained as 6.92 V for gold beam material and the thickness is taken as 0.5 µm, and the switch has a good switching time as 4.9 µs. The up capacitance and stress analysis are obtained as 9.16 fF, 2.69 MPa. The RF performance analysis such as return, insertion loss are analyzed using HFSS software and are obtained as − 26.48 dB and − 0.60 dB at 60 GHz frequency. The maximum isolation of switch is − 41.88 dB at 54.1 GHz, the overall proposed design shows good RF-performance at 45–70 GHz frequency range. Finally, the proposed switch is applicable for high-frequency applications.