Characterization of Ge22Sb22Te56 and Sb-Excess Ge15Sb47Te38 Chalcogenide Thin Films for Phase-Change Memory Applications

被引：0
|
作者：
Sang-Ouk Ryu
机构：
[1] Dankook University,Department of Electronics Engineering
来源：
Journal of Electronic Materials | 2008年 / 37卷
关键词：
GST; electrical properties; set/reset process; nucleation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A phase-change memory device that utilizes an antimony (Sb)-excess Ge15Sb47Te38 chalcogenide thin film was fabricated and its electrical properties were measured and compared with a similar device that uses Ge22Sb22Te56. The resulting electrical characteristics exhibited Ireset values of 14 mA for Ge22Sb22Te56 and 10.6 mA for Ge15Sb47Te38. Also, the set operation time (tset) for the device using Ge15Sb47Te38 films was 140 ns, which was more than twice as fast as the Ge22Sb22Te56 device. The relationship between the microstructure and the improved electrical performance of the device was examined by means of transmission electron microscopy (TEM).
引用
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页码：535 / 539
页数：4
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