Formation of selenium-containing complexes in silicon

被引：0
|
作者：
A. A. Taskin
E. G. Tishkovskii
机构：
[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Division
来源：
Semiconductors | 2002年 / 36卷
关键词：
Polymerization; Silicon; Selenium; Magnetic Material; Main Parameter;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The results of studying the formation of selenium-related complexes in silicon are reported. On the basis of analyzing the kinetics of the donor-center formation, the composition of the simplest complexes and the main parameters of their formation were determined. The polymerization process Se + Sen−1 ↔ Sen of selenium atoms was analyzed; this analysis made it possible to describe quantitatively the features of in-diffusion of selenium atoms from the implanted region to the crystal bulk. The equilibrium solubility of selenium in silicon is regarded as a result of the formation of monomers with limited concentration in the course of formation of the complexes.
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页码：605 / 614
页数：9
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