Droplet Epitaxy Image Contrast in Mirror Electron Microscopy

被引：0
作者：
S. M. Kennedy
C. X. Zheng
D. E. Jesson
机构：
[1] Monash University,School of Physics
[2] Monash University,Department of Civil Engineering
[3] Cardiff University,School of Physics and Astronomy
来源：
Nanoscale Research Letters | 2017年 / 12卷
关键词：
Droplet epitaxy; Gallium arsenide; Mirror electron microscopy; Image simulation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Image simulation methods are applied to interpret mirror electron microscopy (MEM) images obtained from a movie of GaAs droplet epitaxy. Cylindrical symmetry of structures grown by droplet epitaxy is assumed in the simulations which reproduce the main features of the experimental MEM image contrast, demonstrating that droplet epitaxy can be studied in real-time. It is therefore confirmed that an inner ring forms at the droplet contact line and an outer ring (or skirt) occurs outside the droplet periphery. We believe that MEM combined with image simulations will be increasingly used to study the formation and growth of quantum structures.
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