A model of AlN layer formation during ion nitriding of Al

被引：0
|
作者：
V.I. Dimitrov
机构：
[1] Forschungszentrum Rossendorf,Institute of Ion Beam Physics and Materials Research
[2] Fatih University Istanbul,undefined
来源：
Applied Physics A | 2004年 / 79卷
关键词：
Growth Process; Diffusion Model; Reaction Zone; Layer Formation; Diffusion Transport;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A diffusion model of AlN layer formation by ion nitriding of Al is proposed based on the analysis of atomic transport during the process. This model is reduced to the following. Implantation of N ions to the surface of the specimen, named the reaction zone; extraction of Al from the substrate; diffusion transport of Al to the reaction zone through an AlN layer formed during the process; formation and growth of AlN in the reaction zone; sputtering of the AlN layer. Equations controlling the growth process have been obtained.
引用
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页码：1829 / 1832
页数：3
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