Chemical pressure in the correlated narrow-gap semiconductor FeGa3

被引：0
作者：
Valeriy Yu. Verchenko
Alexander O. Zubtsovskii
Alexander A. Tsirlin
Andrei V. Shevelkov
机构：
[1] Lomonosov Moscow State University,Department of Chemistry
[2] National Institute of Chemical Physics and Biophysics,Experimental Physics VI, Center for Electronic Correlations and Magnetism, Institute of Physics
[3] University of Augsburg,undefined
来源：
Journal of Materials Science | 2019年 / 54卷
关键词：
Chemical Pressure; Heat Capacity Measurements; Parent Crystal Structure; Nonmetallic Behavior; Crushed Crystals;
D O I：
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学科分类号：
摘要：
In the correlated narrow-gap semiconductor FeGa3, 1.25 Ga atoms per formula unit can be replaced by Al atoms providing chemical pressure of ~ 1.2 GPa. The resulting FeGa3−yAly solid solution (0 ≤ y ≤ 1.25) crystallizes in the parent structure type with Al atoms preferentially occupying one of the two crystallographic positions of Ga. As revealed by electrical resistivity and heat capacity measurements, FeGa3−yAly exhibits nonmetallic properties for y = 0.937(9) similar to the parent compound FeGa3 demonstrating that the electronic structure is not significantly altered by the chemical pressure. This result is corroborated by the electronic structure calculations, which show that the band gap is only slightly reduced in FeGa3−yAly for y = 1.
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页码：2371 / 2378
页数：7
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