High carrier concentrations of n- and p-doped GaN on Si(111) by nitrogen plasma-assisted molecular-beam epitaxy

被引:14
作者
Chuah, L. S. [1 ]
Hassan, Z. [1 ]
Ng, S. S. [1 ]
Abu Hassan, H. [1 ]
机构
[1] Univ Sains Malaysia, Sch Phys, George Town 11800, Malaysia
关键词
RAMAN-SCATTERING; III-NITRIDES; GROWTH; ALN; SI; FILMS; MICROSTRUCTURE; DIODES; LAYERS; MODES;
D O I
10.1557/JMR.2007.0336
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High-quality doped GaN layers were grown on silicon substrates by radio frequency nitrogen plasma-assisted molecular-beam epitaxy. High-temperature-grown AIN (about 200 nm) was used as a buffer layer. In-growth doping was done using high-purity Si and Mg as n- and p-type dopants, respectively. X-ray diffraction revealed that monocrystalline GaN was obtained. This is in good agreement with the results of morphological study by atomic force microscopy. Micro-photoluminescence (PL) and micro-Raman spectroscopy were used to study the room-temperature optical properties of the doping films. No yellow-band emission was observed in the PL spectroscopy. From the Hall measurements, the resulting n-type doping concentration was measured to be (1-2) x 10(19) cm(-3). Fairly uniform hole concentration as high as (4-5) x 10(20) cm-3 throughout the GaN crystal was achieved. In terms of the carrier concentration, it was found that the results determined from the Fourier transform infrared analysis are in good agreement with the results determined from the Hall measurements.
引用
收藏
页码:2623 / 2630
页数:8
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