Influence of the Structural Parameters of Triple Junctions of Special Grain Boundaries on Their Recombination Activity

被引:0
作者
A. G. Chueshova
S. M. Pescherova
L. A. Pavlova
A. I. Nepomnyashchikh
E. A. Ludina
E. B. Yakimov
O. V. Feklisova
L. I. Fedina
机构
[1] Vinogradov Institute of Geochemistry,
[2] Siberian Branch,undefined
[3] Russian Academy of Sciences,undefined
[4] Rzhanov Institute of Semiconductor Physics,undefined
[5] Siberian Branch,undefined
[6] Russian Academy of Sciences,undefined
[7] Institute of Microelectronics Technology Problems and High Purity Materials,undefined
[8] Russian Academy of Sciences,undefined
来源
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques | 2021年 / 15卷
关键词
multicrystalline silicon; grain boundaries; triple joints of special grain boundaries; rotation matrix; Euler angles; electron backscatter diffraction; recombination activity; electron-beam-induced current;
D O I
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中图分类号
学科分类号
摘要
The geometric parameters of the grain boundaries that make up triple joints and their possible combinations are studied by electron backscatter diffraction using Channel HKL5 software. It is shown experimentally that, in addition to the previously studied and fairly widespread triple joints of special grain boundaries, there are other varieties of them. It is found that at these triple junctions, in particular, the geometric combination rule is violated, which may indirectly indicate the recombination activity of special boundaries.
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页码:S1 / S6
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