Laser stimulated low-temperature crystallization of amorphous silicon

被引：0

作者：

S. A. Avsarkisov

Z. V. Jibuti

N. D. Dolidze

B. E. Tsekvava

机构：

[1] Tbilisi State University,

来源：

Technical Physics Letters | 2006年 / 32卷

关键词：

64.10.+h; 61.50.Ks;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Laser annealing of amorphous silicon (a-Si) at different initial temperatures (77 and 300 K) has been studied. It is established that the laser-stimulated crystallization of silicon is possible at relatively low temperatures. A theoretical model is proposed, which explains this phenomenon by melting via the electron mechanism followed by recrystallization.

引用

页码：259 / 261

页数：2

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